Method and apparatus for reducing signal loss in a photo detector

ABSTRACT

Photonic structures and methods of formation are disclosed in which a photo detector interface having crystalline misfit dislocations is displaced with respect to a waveguide core to reduce effects of dark current on a detected optical signal.

FIELD OF THE INVENTION

Embodiments are described which are directed to reducing optical signallosses in a photo detector.

BACKGROUND OF THE INVENTION

Photonic devices are now being integrated on a same substrate aselectronic circuits, such as CMOS circuits. The substrate material forsuch integration is typically silicon, either as bulk silicon or as asilicon on insulator structure. Many photonic devices can be formed in apatterned silicon layer provided over the substrate. For example, awaveguide core can be formed of silicon over a substrate, the latter ofwhich can also be a silicon substrate, provided the silicon waveguidecore is surrounded by a cladding having a lower index of refraction thanthe silicon of the core. Silicon dioxide is often used as a suitablecladding material as it has an index of refraction of about 1.45compared to a refractive index of about 3.45 for silicon. Othermaterials can also be used for the waveguide core and cladding materialprovided there is a sufficient difference between the higher refractiveindex of the core and lower refractive index of the cladding.

However, some photonic devices must be formed of materials other thansilicon, but which interface with silicon. A photo detector, forexample, a PIN photodiode having P and N regions with an intrinsicregion between, can be formed of silicon for the P and N regions andgermanium or a silicon-germanium material (for a silicon-germaniummaterial for use in a photo detector the germanium mole fraction shouldbe at least 30%) for the intrinsic region. For purposes of discussionherein, whenever a silicon germanium material is discussed it will bepresumed to have at germanium mole fraction of at least 30%. Germaniumor silicon-germanium are often preferred for use in a photo detector forreceiving light because they more sensitive to light compared withsilicon at the wavelengths greater than 1.1 μm.

When a germanium or silicon-germanium material is formed in contact withsilicon, for example at the interface with the silicon P or N regions ofa PIN diode, crystal lattice mismatch defects occur at the interface.For example, at a germanium-to-silicon interface, there is a 4.2%lattice mismatch. A lattice mismatch creates misfit dislocations whichcreates charge trap states at the interface. The trap states caninterfere with the photoelectric conversion process by producing energylevels in the band gap of the photo detector which result in theproduction of dark current. Dark current reduces the overall signal tonoise ratio of the photo detector and reduces its responsiveness to thephotoelectric conversion of received light.

A photo detector structure and method of making it which lessens theeffect of the misfit dislocations and corresponding trap states on thephoto detector responsiveness to light would be desirable.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a first embodiment of the invention;

FIG. 2 illustrates a second embodiment of the invention;

FIG. 3 illustrates a third embodiment of the invention;

FIG. 4 illustrates a fourth embodiment of the invention;

FIGS. 5A, 5B, 5C, 5D, 5E illustrate successive steps of a methodembodiment for forming the FIG. 1 embodiment; and

FIGS. 6A, 6B, 6C illustrate successive steps of a second methodembodiment for forming the FIG. 2 embodiment.

FIGS. 7A and 7B respectively illustrate alternative embodiments.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments described herein provide a photo detector in which misfitdislocation and associated charge trap states at the interface betweenan intrinsic region, e.g. of a germanium or silicon-germanium, and asemiconductor, e.g. silicon, region do not reside on the same plane as awaveguide core which is optically coupled to the intrinsic region of thephoto detector. By displacing the interface and associated misfitdislocations and trap states to a level below or above that of thewaveguide core, the defects are removed from the light receivingintrinsic region of a photo detector. This reduces dark current andprovides an improved photo detector signal to noise ratio.

FIG. 1 illustrates a first structural embodiment in which a PIN diodephoto detector 134 is formed to receive light from an adjacent waveguidecore 121 . A silicon substrate 111 has a shallow trench isolation regionformed therein containing an oxide 119, e.g., silicon dioxide. Theshallow trench isolation region provides an upper surface 120 on whichthe waveguide core 121 is formed. The shallow trench isolation regionmay have a thickness of at least 1 μm. The waveguide core 121 can beformed of silicon which has a higher index of refraction than the trenchoxide 119. An oxide 123, e.g., silicon dioxide, is also provided on thesides and over the waveguide core 121 such that the waveguide core 121is surrounded by a cladding oxide. In this manner, an optical waveguideis formed by core 121 and the cladding provided by the oxide 119 andoxide 123. Other materials can also be used to form core 121 andcladding 119 and 123 provided the index of refraction of the material ofthe waveguide core 121 is higher than the index of refraction of thecladding material.

The silicon substrate 111 has an upper surface 112 which is recessedbelow the level of the oxide surface 120 on which waveguide core 121 isformed. A pad oxide 113 is provided at the upper surface 112 of thesilicon substrate 111. Alternatively, the pad oxide 113 can be omitted,as will be further described below with respect to a method for formingthe FIG. 1 structure. An intrinsic region 125 of the PIN photo detector134 is formed of, for example, germanium or silicon-germanium and isprovided within an opening 150 in oxide 123 such that the lower surfaceof the intrinsic region 125 forms an interface 140 with the siliconsubstrate 111. Silicon substrate 111 includes an N-well region 114 atits upper portion. The interface 140 between material of the intrinsicregion 125 and the underlying silicon N-well 114, where misfitdislocations will occur, is displaced downwardly below the upper surface120 of the oxide 119 and thus below the lowermost level of waveguidecore 121. The upper surface 112 of the silicon substrate 111 iselevationally displaced downwardly from the upper surface 120 of oxide119 by a distance d₁ within the range of from about 1 angstrom to about10 nanometers. As a consequence, the interface 140 is placed below thearea of intrinsic region 125 which receives light from waveguide core121 and dark current is reduced. The upper surface of the intrinsicmaterial 125 is also recessed within the opening 150 and a layer of Pdoped silicon is formed therein as a silicon plug 132. The interface 138of the intrinsic material 125 with the silicon plug 132 is elevationallydisplaced upwardly relative to the upper surface of waveguide core 121also by a distance d₃ within the range of from about 1 angstrom to about10 nanometers to reduce the effects of the interface trap states at thatinterface on photons received from the waveguide core 121.

FIG. 1 also shows a more heavily N doped ohmic contact region 192 in theN-well 114 for connecting with a conductor filled via 160 which provideselectrical connection with the N-well 114. Likewise, an ohmic contactregion 190 which is more heavily P doped than silicon plug 132 isprovided within the silicon plug 132 for making electrical contact tothe silicon plug 132.

As shown in FIG. 1 the waveguide core is laterally spaced slightly fromthe PIN diode photo detector 134 such that coupling of the waveguidecore 121 to the intrinsic material 125 is by evanescent coupling. Inoperation, photons received by the intrinsic material 125 from core 121are converted to electrons and holes which respectively flow to theN-well 114 and P type silicon plug 132 with little effect on photonconversion by the trap states at the interfaces of the intrinsicmaterial 125 with the N-well 114 and silicon plug 132

FIG. 2 illustrates another embodiment in which the interface 140 a ofthe intrinsic region 126 and N-well region 114 region of photo detector170 is displaced below the upper surface of oxide 119 and thus below thelowest level of the waveguide core 121. In this embodiment a high aspectratio (depth divided by width) structure is provided by a first upperopening portion 135 provided in the oxide 123 and below that a secondlower opening portion 137 provided within N-well 114. The sidewalls ofthe upper and lower opening portions 135 and 137 are lined with an oxideliner 127 which also may extend over the waveguide cladding oxide 123.The oxide liner 127 is not present at the bottom of the lower openingportion 137. The upper opening portion 135 and lower opening portion 137are filled with an intrinsic material, for example, germanium orsilicon-germanium to form the intrinsic region 126 of photo detector170. The intrinsic material may be N or P-type and has a low dopantconcentration of less than 1E¹⁵cm⁻³. For example, the intrinsic materialcan be an N-type with a dopant concentration of less than 1E¹⁵cm⁻³. Theinterface of the intrinsic region 126 and N-well region 114 of siliconsubstrate 111 at the bottom of the opening portion 137 is againdisplaced below the upper surface of the shallow trench oxide 119 by adistance d₂ within the range of about 1 angstrom to about 10 nanometersand thus below the lowest level of waveguide core 121. The upper surfaceof the intrinsic material region 126 within the upper opening portion137 is recessed and a P doped silicon plug 132 is formed in the recess.The interface 138 of the intrinsic region 126 and P doped silicon plug132 is also displaced above the upper surface of the waveguide core 121by a distance d₃ within the range of about 1 angstrom to about 10nanometers to reduce dark current at trap states at that interface.

The FIG. 2 embodiment also has the waveguide core 121 laterally spacedfrom the intrinsic region 126 and uses evanescent coupling between themfor optical signal transfer from the core 121 to the intrinsic region126.

The FIG. 2 embodiment also includes a conductive via 160 extendingthrough the oxide 123 and the oxide liner 127 to the N-well 114 and amore heavily doped N region 192 in the N-well for providing a good ohmiccontact to the N-well 114. The silicon plug 132 also includes a moreheavily doped P region 190 for providing a good ohmic contact to thesilicon plug 132.

The FIG. 1 and FIG. 2 embodiments show a lateral spacing and evanescentcoupling between the waveguide core 121 and photo detector 134 (FIG. 1)or 170 (FIG. 2). However, FIGS. 1 and 2 can be modified to obtain a buttcoupling of the waveguide core 121 to the photo detector, by having thewaveguide core 121 butt up against the intrinsic region of photodetector 134 (FIG. 1) or 170 (FIG. 2), as shown in respective FIGS. 3and 4. In FIG. 4 the butt coupling has an intervening oxide liner 127between the waveguide core 121 and photo detector 170. Transmission fromthe waveguide core 121 to the photo detector 170 is maximized when theintervening oxide thickness is one quarter of the wavelength of incominglight, when measured in a vacuum, divided by the refractive index of theoxide, in effect creating a quarter-wave coating.

One example of a method of making the FIG. 1 structure will now bedescribed with respect to FIGS. 5A-5E. Except for locating the waveguidecore 121 and photo detector 134 against one another, the same method canbe used to make the FIG. 2 structure.

FIG. 5A illustrates a silicon substrate 111 on which a pad oxide 113,e.g., silicon dioxide, is formed by, for example, thermal growth or bydeposition techniques. A hard mask 115 is deposited over the pad oxide113 and patterned by, for example, selective etching to provide anopening 116 to the pad oxide 113. The hard mask can be formed of variousmaterials, for example, silicon nitrite, a combination of siliconnitrite and a silicon oxide, or other hard mask material which willallow selectively etching of the pad oxide 113 and silicon substrate 111without also etching the hard mask 115.

As shown in FIG. 5B, the patterned hard mask 115 is next used as etchmask and both the pad oxide 113 and underlying silicon substrate 111 areetched using known etching techniques to form a shallow trench 117. Asshown in FIG. 5C, the trench 117 is filled with an oxide 119, e.g.,silicon dioxide, which is then planarized to the upper level of hardmask 115. The shallow trench may have a depth of at least 1 μm.

Next, as shown in FIG. 5D, the hard mask 115 is removed using knowntechniques and a waveguide core material, e.g. silicon, is depositedover the oxide 119 and patterned to form a waveguide core 121. The padoxide 113 can also be optionally removed at this point, or can remain inplace as shown in FIG. 5D. In addition, an N type well 114 is formed inthe silicon substrate 111 by dopant implants. If the pad oxide 113 isnot removed this implant doping occurs through the pad oxide 113. Asshown in FIG. 5D the upper surface N-well 114 is now elevationallydisplaced downwardly by a distance d₁ relative to the level of the uppersurface 120 of the oxide 119 and lower surface of the waveguide core121. The amount of this distance d₁ is determined by the thickness ofthe hard mask 115, both of which may be within the range of about 1angstrom to about 10 nm.

Following this, as shown in FIG. 5E, an oxide 123, e.g. silicon dioxide,is deposited over the silicon substrate 111 and waveguide core 121 andselectively etched to form an opening 150 in which a photo detector 134will be formed. The photo detector 134 is formed by epitaxial growth ofan intrinsic material 125, for example, germanium or silicon germaniumwithin the opening 150 until the growth reaches the upper surface of theoxide 123. The epitaxial growth is planarized to the upper surface ofoxide 123. Following this, the intrinsic material 125 is etched backwithin opening 150 to form a recess in opening 150. A silicon layer isthen deposited over the substrate and oxide 123 and planarized to thelevel of the oxide 123 to fill the recess with a silicon plug 132. Thesilicon plug 132 is doped with a P type dopant and together withintrinsic region 125 and N-well 144 forms a PIN diode structure as photodetector 134.

The interface 140 of the intrinsic region 125 and N-well 114 and theinterface 138 of the intrinsic region 125 and P type silicon plug 132are both elevationally displaced respectively by distances d₁ and d₃away from the lower and upper surfaces of waveguide core 121 so thattrap states at the interfaces are displaced away from the region withinthe intrinsic material 125 where photo conversion occurs. As noted, theamount by which the interface 128 is lowered relative to the lower levelof the waveguide core 121 is set by the thickness of the hard mask 115,so a desired level offset can be easily obtained by controlling thefabrication thickness of hard mask 115. The amount by which theinterface between the intrinsic region 125 and silicon plug 132 isdisplaced upwardly from the upper surface of the waveguide core 121 isdetermined by the thickness of oxide 123 and the depth of the recess inopening 150 formed by etching back the intrinsic material 125 and may bechosen to also produce an upward displacement of the interface relativeto the upper surface of waveguide core 121 having a distance d₃.

FIG. 5E also shows formation of ohmic contact areas 190 in the siliconplug 132 and 192 in the N-well 114. Ohmic contact area 190 is moreheavily P doped than the silicon plug 132, while the ohmic contact area192 is more heavily N doped than the N-well 114. A conductive via 160 isalso formed to connect with ohmic contact area 192. As an alternativesilicon plug 132 can be doped sufficiently high to provide an ohmiccontact and the contact area 190 can be a salicided area of silicon plug132.

FIGS. 6A through 6C illustrate an example method for forming the FIG. 2structure. The method follows the process flow in FIGS. 5A through 5D.After the structure in FIG. 5D is formed and the N-well 114 is formed inthe silicon substrate 111, the pad oxide 113 is removed, or optionallyretained, and an oxide, e.g. silicon dioxide, layer 123 is formed overthe waveguide core 121 and silicon substrate 111. FIGS. 6A through 6Cshow that the oxide pad 113 is removed. Next, an opening 150 is etchedin oxide 123 down to the surface 112 of the N-well 114 within siliconsubstrate 111 at the area where the photo detector 170 will be formed.This forms an upper opening portion 135. An oxide, e.g. silicon dioxide,liner 127 is formed on the sidewalls of the opening portion 135 and onthe surface of oxide layer 123. Following this, a spacer 129 of, e.g.silicon nitride, is formed over the oxide liner 127 on the sidewalls ofthe upper opening 135. The bottom of oxide liner 127 and N-well 114 arethen etched using the spacer 129 as the etch mask to form a loweropening portion 137, as shown in FIG. 6B. The upper opening portion 135is wider than the lower opening portion 137, for example, by an order ofmagnitude. Next, the spacer 129 is removed from the first upper openingportion 135 and following this the exposed surfaces of the N-well at thesidewalls of the lower portion 137 are lined with an oxide 134, e.g.silicon dioxide, either by thermal growth or deposition. The oxide liner134 is then anisotropically etched at the bottom of the second loweropening portion 137 to expose the N-well 114. The opening, both upper135 and lower 137 portions, is then filled with intrinsic material 126,for example, germanium or silicon-germanium. The interface 140 a of theintrinsic material 126 and N-well 114 is at a distance d₂ well below thelowest level of the waveguide core 121 such that trap states at theinterface 140 a produce a reduced dark current which improves the signalto noise ratio of photo detector 170. As noted with respect to FIG. 2,the distance of d₂ is within the range of 1 angstrom to 10 nm.

The intrinsic material 135 within the opening 150 is etched back torecess its upper surface and silicon is deposited and P-type doped andplanarized to the level of the oxide liner 127. The interface 138between the silicon plug 132 and intrinsic material 126 is displacedupwardly relative to the top surface of waveguide core 121 by a distanced₃ which is within the range of about 1 angstrom to about 10 nm. Anohmic contact area 190 is formed in the silicon plug 132, by making itmore heavily P-doped than the remainder of silicon plug 132.Alternatively, the silicon plug 132 can be doped sufficiently high toprovide an ohmic contact and the contact area 190 can be a salicidedarea of silicon plug 132. Likewise, an ohmic contact area 192, which ismore heavily N doped than N-well 114, is formed in the N-well 114. Aconductive via is formed in the oxide 123 and connects with ohmiccontact area 192.

The structures illustrated in FIGS. 3 and 4 where the waveguide core 121abuts the photo detector 134 or 170 can be formed by the same methodsused to form the structures of FIGS. 1 and 2, except that the locationof the formed photo detectors, 134 and 170 and waveguide core 121 aresuch that they butt up against one another.

It should be understood that while a PIN structure is illustrated in thevarious embodiments with the silicon plug 132 forming the P region andthe N-well 114 in the substrate 111 forming the N region, that theconductivity doping of these regions can be reversed, such that the PINphoto detector is formed with an N-type silicon plug 132 and a P-well114 in substrate 111. Also, although a PIN diode structure is shown inthe illustrated embodiments, the displacement of an interface betweendissimilar crystalline structures within a photo detector relative to awaveguide core can also be applied to other diode structures.

FIGS. 7A and 7B, respectively, show in a simplified form an alternativestructure and method of forming the intrinsic region 125 (FIG. 1) or 126(FIG. 2). When the epitaxial growth of the intrinsic material, e.g.germanium or silicon-germanium starts, the initial growth can be dopedto the same conductivity as that of the doped well in the siliconsubstrate 111 forming a transition region 196. Thus, as the germanium orsilicon germanium intrinsic region 125 or 126 begins to form it can bedoped N when N-well 114 is provided in the silicon substrate 111. ThisN-doped transition region 196 of the intrinsic material improvessensitivity of the photo detector 134 or 170. Improved sensitivity canalso be obtain by forming the N-doped transition region 196 of dopedsilicon which transitions during epitaxial growth to the intrinsicregion material, e.g. germanium or silicon-germanium.

While various structural and method embodiments are disclosed, these arenot limiting of the inventions as modifications can be made which do notdepart from the spirit or scope of the invention. Accordingly, theinvention is not limited by the drawings or foregoing description, butis only limited by the scope of the claims appended hereto.

1. A photonic structure comprising: a photo detector having a firstinterface between a light receiving region and a first semiconductorregion, the first interface having a crystalline lattice mismatchbetween the light receiving region and first semiconductor region; and awaveguide core for supplying optical signals to the light receivingphoto detector at a location within the light receiving region which isdisplaced from the interface.
 2. A photonic structure as in claim 1,wherein the location within the light receiving region is elevationallydisplaced from the interface.
 3. A photonic structure as in claim 2,wherein the light receiving region comprises an intrinsic region and thefirst semiconductor region has a first type of conductivity.
 4. Aphotonic structure as in claim 3, wherein the semiconductor region ispart of a substrate, the photonic structure further comprising: anisolation region formed on the substrate and having an upper surface ata higher elevational level than an upper surface of the substrate, thewaveguide core being located on the upper surface of the isolationregion and the first interface being located at the upper surface of thesubstrate.
 5. A photonic structure as in claim 4, wherein the isolationregion is a trench isolation region formed at least partially within thesubstrate.
 6. A photonic structure as in claim 4, wherein the firstsemiconductor region is a well in the semiconductor substrate.
 7. Aphotonic structure as in claim 4, wherein the photo detector furthercomprises a second semiconductor region and a second interface betweenthe intrinsic region and second semiconductor region, the secondsemiconconductor region having a second type of conductivity.
 8. Aphotonic structure as in claim 7, wherein the first type of conductivityis N-type and the second type of conductivity is P-type.
 9. A photonicstructure as in claim 7, wherein the first and second semiconductorregions comprise silicon.
 10. A photonic structure as in claim 9,wherein the waveguide core comprises silicon.
 11. A photonic structureas in claim 9, wherein the intrinsic region comprises one of germaniumand silicon-germanium, where the mole fraction of germanium in thesilicon germanium comprises at least 30%.
 12. A photonic structure as inclaim 7, wherein the intrinsic region receives light from the waveguideat a location elevationally displaced from the second interface.
 13. Aphotonic structure as in claim 4, wherein the upper surface of theisolation region is elevationally displaced from the upper surface ofthe substrate by a distance within the range of about one angstrom toabout 10 nm.
 14. A photonic structure as in claim 7, wherein the secondinterface is elevationally displaced from an upper surface of thewaveguide core by a distance within the range of about one angstrom toabout 10 nm.
 15. A photonic structure as in claim 5, wherein the trenchisolation region is a shallow trench isolation region having a thicknessof at least 1 μm.
 16. A photonic structure as in claim 7, furthercomprising an oxide layer provided over the waveguide core andsubstrate, the photo detector intrinsic region being formed in anopening of the oxide layer, the second semiconductor region being formedin the opening over the intrinsic region.
 17. A photonic structure as inclaim 3, wherein the waveguide core is evanescent coupled to theintrinsic region.
 18. A photonic structure as in claim 3, wherein thewaveguide core is butt coupled to the intrinsic region.
 19. A photonicstructure as in claim 16, wherein the opening has an upper portion and alower portion, the upper portion being wider than the lower portion. 20.A photonic structure as in claim 19, wherein the sidewalls of the upperand the lower portion have an oxide liner.
 21. A photonic structure asin claim 19, wherein the lower portion extends into the firstsemiconductor region.
 22. A photonic structure as in claim 7, whereinthe intrinsic region further comprises a transition region adjacent thefirst semiconductor region.
 23. A method of forming a photonicstructure, comprising: forming a dielectric area on a semiconductorsubstrate such that an upper surface of the dielectric area is at ahigher level than an upper surface of the semiconductor substrate;forming a waveguide core on the upper surface of the dielectric area;and forming a photo detector material on the upper surface of thesemiconductor substrate, whereby an interface of the photo detectormaterial and semiconductor substrate is at a lower level than a lowersurface of the waveguide core.
 24. A method as in claim 23, whereby thephoto detector material forms an intrinsic region of a PIN photodetector.
 25. A method as in claim 24, further comprising formingdielectric material over the waveguide core and substrate prior toforming the photo detector material and forming the photo detectormaterial in an opening to the substrate in the dielectric material. 26.A method as in claim 24, wherein the waveguide core and PIN photodetector are formed at locations which provide evanescent couplingbetween them.
 27. A method as in claim 24, wherein the waveguide coreand PIN photo detector are formed at locations which provide a buttcoupling between them.
 28. A method as in claim 23, wherein thedielectric area comprises an oxide filled shallow trench isolation area.29. A method as in claim 25, wherein said dielectric material comprisesan oxide material.
 30. A method as in claim 24, wherein the photodetector material comprises one of germanium and silicon-germaniummaterial, with the mole fraction of germanium comprising at least 30% ofthe silicon-germanium material.
 31. A method as in claim 23, wherein thesemiconductor substrate and waveguide core comprise silicon.
 32. Amethod as in claim 25, wherein the opening has an upper wider portionextending to the substrate surface and a lower narrower portion whichextends into the substrate.
 33. A method as in claim 23, wherein thelower level of the waveguide core is elevationally displaced upwardlyfrom the upper surface of the semiconductor substrate by a distancewithin the range of about one angstrom to about 10 nm.
 34. A method asin claim 24, further comprising forming a semiconductor regional incontact with a side of the intrinsic region which is opposite a side ofthe intrinsic region in contact with the semiconductor substrate.
 35. Amethod as in claim 34, wherein an interface between the intrinsic regionand semiconductor region is elevationally displaced upwardly from anupper surface of the waveguide core by a distance within the range ofabout one angstrom to about 10 nm.
 36. A method of forming a photonicstructure, comprising: forming an oxide material over a substrate;forming a hard mask material over a portion of the oxide material;etching the oxide material and substrate in areas where the hard mask isnot formed; filling the etched areas with a first dielectric to thelevel of an upper surface of the hard mask; removing the hard mask;forming a waveguide core over the first dielectric; forming a seconddielectric over the waveguide core and substrate; forming an opening inthe second dielectric at least to the substrate surface; and forming aphoto detector material in the opening, whereby the lower surface of thephoto detector material is at a lower level than the lower surface ofthe waveguide core.
 37. A method as in claim 36, wherein the seconddielectric material comprises silicon dioxide.
 38. A method as in claim36, wherein said hard mask material comprises silicon nitride.
 39. Amethod as in claim 36, wherein the first dielectric comprises silicondioxide.
 40. A method as in claim 36, wherein the waveguide corecomprises silicon.
 41. A method as in claim 36, wherein the photodetector material forms an intrinsic region of a photo detector.
 42. Amethod as in claim 41, wherein said photo detector material comprisesone of germanium and silicon-germanium, where the mole fraction ofgermanium comprises at least 30% of the silicon germanium.
 43. A methodas in claim 36, further comprising forming a recess in the opening abovethe formed photo detector material and forming a semiconductor materialin the recess in contact with the photo detector material.
 44. A methodas in claim 36, wherein forming the opening at least to the substratesurface comprises: forming an upper opening portion to an upper surfaceof the substrate; forming a liner on the sidewalls of the upper openingportion; forming a spacer over the liner; etching a lower portion of theopening into the substrate using the spacer as a mask; removing thespacer; lining the sidewalls of the lower portion of the opening with anoxide; and filling the upper and lower portions of the opening with thephoto detector material.